advanced power n-channel enhancement mode electronics corp. power mosfet capable of 2.5v gate drive bv dss 30v small outline package r ds(on) 50m surface mount device i d 4.1a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 90 /w data and specifications subject to change without notice thermal data parameter 1 operating junction temperature range -55 to 150 continuous drain current 3 , v gs @ 4.5v 3.3 pulsed drain current 1 16 storage temperature range total power dissipation 1.38 -55 to 150 gate-source voltage + 6 continuous drain current 3 , v gs @ 4.5v 4.1 parameter rating drain-source voltage 30 AP2306AGEN 200812031 rohs-compliant product d g s sot-23 advanced power mosfets utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. the sot-23 package is widely used for commercial-industrial applications. g d s
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =4.5v, i d =4a - - 50 m ? ? ,
AP2306AGEN fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 30 40 50 60 70 02468 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =3a t a =25 o c 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =4a v g =4.5v 0.0 1.0 2.0 3.0 4.0 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.0 0.5 1.0 1.5 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v) 0 4 8 12 16 20 0.0 2.0 4.0 6.0 8.0 10.0 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 5.0v 4.5v 3.5v 2.5v v g = 2.0 v 0 4 8 12 16 0.0 2.0 4.0 6.0 8.0 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c 5.0v 4.5v 3.5v 2.5v v g = 2.0 v
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge circuit 4 AP2306AGEN 0 200 400 600 800 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0 2 4 6 8 0.0 4.0 8.0 12.0 16.0 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =3a v ds =15v v ds =18v v ds =24v q v g 4.5v q gs q gd q g charge 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a r thja = 270 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc t d(on) t r t d(off) t f v ds v gs 10% 90%
package outline : sot-23 millimeters min nom max a 1.00 1.15 1.30 a1 0.00 -- 0.10 a2 0.10 0.15 0.25 d1 0.30 0.40 0.50 e 1.70 2.00 2.30 d 2.70 2.90 3.10 e 2.40 2.65 3.00 e1 1.40 1.50 1.60 1.all dimension are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : sot-23 advanced power electronics corp. symbols nrss part number : nr d e1 e e d1 a a1 a2 date code : ss:2004,2008,2012? ss :2003,2007,2011? s s:2002,2006,2010? ss :2001,2005,2009? "a~z" showed on 3rd position --> week 1 ~ week 26, "a~z" showed on 4th position --> week 27 ~ week 52. laser marking
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